Title :
K-Band High-Power GaAs FET Amplifiers
Author :
Sone, Jun´ichi ; Takayama, Yoichiro
fDate :
4/1/1981 12:00:00 AM
Abstract :
Lumped-element internal matching techniques were successfully adopted for K-band power GaAs FET amplifiers. The developed 18-GHz band two-stage amplifier provides 1.05-W power output at 1-dB gain compression and 1.26-W saturated power output with 8.1-dB small-signal gain. The 20-GHz band single-stage amplifier has 1.04-W power output with 3-dB associated gain. Lumped-element internal matching circuit design as well as amplifier fabrication are described. Intermodulation distortion and AM-to-PM conversion characteristics are also presented.
Keywords :
Circuit synthesis; Electrons; Gallium arsenide; High power amplifiers; K-band; MESFETs; Microwave FETs; Microwave amplifiers; Microwave theory and techniques; Power amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1981.1130349
