• DocumentCode
    926233
  • Title

    Transit modes of InP transferred-electron devices

  • Author

    Jones, D. ; Rees, H.D.

  • Author_Institution
    Royal Radar Establishment, Malvern, UK
  • Volume
    11
  • Issue
    1
  • fYear
    1975
  • Firstpage
    13
  • Lastpage
    14
  • Abstract
    The characteristics of accumulation transit oscillations in InP n+-n-n+ transferred-electron oscillators and the dependence of device efficiency on the injection properties of the cathode contact have been analysed by computer simulation.
  • Keywords
    electronics applications of computers; transferred electron devices; InP transferred electron devices; accumulation transit oscillations; cathode contact; computer simulation; injection properties; transit modes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750010
  • Filename
    4236516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926233