Title :
Transit modes of InP transferred-electron devices
Author :
Jones, D. ; Rees, H.D.
Author_Institution :
Royal Radar Establishment, Malvern, UK
Abstract :
The characteristics of accumulation transit oscillations in InP n+-n-n+ transferred-electron oscillators and the dependence of device efficiency on the injection properties of the cathode contact have been analysed by computer simulation.
Keywords :
electronics applications of computers; transferred electron devices; InP transferred electron devices; accumulation transit oscillations; cathode contact; computer simulation; injection properties; transit modes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750010
