Title :
Limitations on high-temperature processing of aluminum-copper metallization
fDate :
4/1/1973 12:00:00 AM
Abstract :
Disruptive alteration of the structure of heat-treated aluminum-copper metallization either containing or contacting silicon is reported. Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metallization containing copper.
Keywords :
Aluminum alloys; Copper; Degradation; Electromigration; Inorganic materials; Integrated circuit metallization; Semiconductor films; Silicon alloys; Silicon devices; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9071
