Title :
1550 nm-band VCSEL 0.76 mW singlemode output power in 20-80°C temperature range
Author :
Syrbu, A. ; Mereuta, A. ; Mircea, A. ; Caliman, A. ; Iakovlev, V. ; Berseth, C.-A. ; Suruceanu, G. ; Rudra, A. ; Deichsel, E. ; Kapon, E.
Author_Institution :
BeamExpress SA, Lausanne, Switzerland
fDate :
3/4/2004 12:00:00 AM
Abstract :
Wafer-fused InGaAlAs/AlGaAs vertical cavity surface emitting lasers with InAlGaAs-based tunnel junction injection have shown record high 0.7 mW singlemode output power in the 10-80°C temperature range. Single transverse-mode operation with 35 dB sidemode suppression and low divergence beam with 9° half width at half maximum has been measured on devices with 7 μm aperture.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor lasers; surface emitting lasers; 0.76 mW; 1550 nm; 20 to 80 degC; 35 dB; 7 micron; InAlGaAs-based tunnel junction injection; InGaAlAs-AlGaAs; VCSEL; half width half maximum; sidemode suppression; single transverse-mode operation; singlemode output power; wafer-fused vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040222
