• DocumentCode
    926415
  • Title

    Electroluminescent GaAs--GaxAl1-xAs heterostructure diodes with negative resistance at low temperatures

  • Author

    Beneking, H. ; Gattung, A.

  • Author_Institution
    RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
  • Volume
    11
  • Issue
    2
  • fYear
    1975
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    GaAs--GaxAl1-xAs 4-layer heterostructures can exhibit a negative resistance at low temperatures if the p-type layers are doped with Si and Ge, respectively. A region of high resistivity is formed because of freezeout of carriers on deep levels. The effect can be described by Lampert´s model of double injection.
  • Keywords
    III-V semiconductors; electroluminescence; gallium arsenide; light emitting diodes; luminescence of inorganic solids; negative resistance effects; p-n heterojunctions; Lamperts model; double injection; electroluminescent GaAs-GaxAl1-xAs heterostructure diodes; negative resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750029
  • Filename
    4236536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926415