DocumentCode :
926415
Title :
Electroluminescent GaAs--GaxAl1-xAs heterostructure diodes with negative resistance at low temperatures
Author :
Beneking, H. ; Gattung, A.
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Volume :
11
Issue :
2
fYear :
1975
Firstpage :
37
Lastpage :
38
Abstract :
GaAs--GaxAl1-xAs 4-layer heterostructures can exhibit a negative resistance at low temperatures if the p-type layers are doped with Si and Ge, respectively. A region of high resistivity is formed because of freezeout of carriers on deep levels. The effect can be described by Lampert´s model of double injection.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; light emitting diodes; luminescence of inorganic solids; negative resistance effects; p-n heterojunctions; Lamperts model; double injection; electroluminescent GaAs-GaxAl1-xAs heterostructure diodes; negative resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19750029
Filename :
4236536
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=926415
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