• DocumentCode
    926427
  • Title

    Transistor Electronics: Imperfections, Unipolar and Analog Transistors

  • Author

    Shockley, W.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N.J.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1289
  • Lastpage
    1313
  • Abstract
    The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal. The behavior of an excess electron as a negative particle moving with random thermal motion and drifting in an electric field is described in detail. A hole is similar to an electron in all regards save sign of charge. Some fundamental experiments have been performed with transistor techniques and exhibit clearly the behavior of holes and electrons. The interactions of holes, electrons, donors, acceptors, and deathnium give rise to the properties of p-n junctions, p-n junction transistors, and Zener diodes. Point-contact transistors are not understood as well from a fundamental viewpoint. A new class of unipolar transistors is discussed. Of these, the analog transistor is described in terms of analogy to a vacuum tube.
  • Keywords
    Bonding; Charge carrier processes; Chemicals; Crystals; Electrons; Germanium; P-n junctions; Physics; Silicon; Transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273954
  • Filename
    4050826