DocumentCode
926427
Title
Transistor Electronics: Imperfections, Unipolar and Analog Transistors
Author
Shockley, W.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Volume
40
Issue
11
fYear
1952
Firstpage
1289
Lastpage
1313
Abstract
The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal. The behavior of an excess electron as a negative particle moving with random thermal motion and drifting in an electric field is described in detail. A hole is similar to an electron in all regards save sign of charge. Some fundamental experiments have been performed with transistor techniques and exhibit clearly the behavior of holes and electrons. The interactions of holes, electrons, donors, acceptors, and deathnium give rise to the properties of p-n junctions, p-n junction transistors, and Zener diodes. Point-contact transistors are not understood as well from a fundamental viewpoint. A new class of unipolar transistors is discussed. Of these, the analog transistor is described in terms of analogy to a vacuum tube.
Keywords
Bonding; Charge carrier processes; Chemicals; Crystals; Electrons; Germanium; P-n junctions; Physics; Silicon; Transistors;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1952.273954
Filename
4050826
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