DocumentCode
926443
Title
Properties of Silicon and Germanium
Author
Conwell, Esther M.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N.J. On leave from Brooklyn College, Brooklyn, N.Y.
Volume
40
Issue
11
fYear
1952
Firstpage
1327
Lastpage
1337
Abstract
This article provides the latest experimental information on those fundamental properties of germanium and silicon which are of device interest, currently or potentially. Electrical properties, especially carrier density and mobility, have been treated in greatest detail. Descriptive material has been provided to the extent necessary to give physical background.
Keywords
Charge carrier processes; Conductivity; Effective mass; Electron optics; Germanium; Laboratories; Silicon; Telephony; Temperature dependence; Transistors;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1952.273956
Filename
4050828
Link To Document