Title :
Planar Gunn diodes with ideal contact geometry
Author :
Haydl, William H.
Author_Institution :
Institut für Angewandte Festkörperphysik der Fraunhofer-Gesellschaft, Freiburg, Germany
fDate :
4/1/1973 12:00:00 AM
Abstract :
Planar Gunn diodes made from epitazial GaAs on insulating substrates having a contact geometry which results in an ideal electric field distribution are described. The current density is uniform along the diodes, and no high-field regions appear at the contacts. The lengths of the Gunn diodes varied from over 1000 to less than 100 µ.
Keywords :
Bars; Diodes; Epitaxial layers; Geometry; Gunn devices; Ohmic contacts; Optical modulation; Rough surfaces; Substrates; Surface roughness;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9090
