• DocumentCode
    926445
  • Title

    Planar Gunn diodes with ideal contact geometry

  • Author

    Haydl, William H.

  • Author_Institution
    Institut für Angewandte Festkörperphysik der Fraunhofer-Gesellschaft, Freiburg, Germany
  • Volume
    61
  • Issue
    4
  • fYear
    1973
  • fDate
    4/1/1973 12:00:00 AM
  • Firstpage
    497
  • Lastpage
    497
  • Abstract
    Planar Gunn diodes made from epitazial GaAs on insulating substrates having a contact geometry which results in an ideal electric field distribution are described. The current density is uniform along the diodes, and no high-field regions appear at the contacts. The lengths of the Gunn diodes varied from over 1000 to less than 100 µ.
  • Keywords
    Bars; Diodes; Epitaxial layers; Geometry; Gunn devices; Ohmic contacts; Optical modulation; Rough surfaces; Substrates; Surface roughness;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9090
  • Filename
    1451020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926445