P-N Junctions by Impurity Introduction Through an Intermediate Metal Layer

This paper describes an experimental method for making p-n junctions by alloying and diffusing indium into n-type germanium through an intermediate thin layer of some other metal, such as gold, which has been plated on the germanium. The junction characteristics are similar to those of junctions made by other methods, but the shape may be clearly defined and controlled. New possibilities of differentiation between alloying and diffusion are other advantages of the process. Applications have been made to rectifiers and transistors.