Title :
C/V curves for gate-controlled diodes in silicon on sapphire
Author :
Kranzer, Dirk ; Gassaway, J.D.
Author_Institution :
NASA - Marshall Space Flight Center, Electronics & Control Laboratory, Auburn, USA
Abstract :
Experimental C/V curves are presented for gate-controlled diodes in silicon on sapphire and are analysed with a numerically implemented model, which shows the effects of a fixed layer of charge at the silicon-sapphire interface.
Keywords :
field effect devices; semiconductor diodes; C/V curves; SOS; field effect devices; gate controlled diodes; numerically implemented model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750039
