• DocumentCode
    926527
  • Title

    C/V curves for gate-controlled diodes in silicon on sapphire

  • Author

    Kranzer, Dirk ; Gassaway, J.D.

  • Author_Institution
    NASA - Marshall Space Flight Center, Electronics & Control Laboratory, Auburn, USA
  • Volume
    11
  • Issue
    2
  • fYear
    1975
  • Firstpage
    50
  • Lastpage
    52
  • Abstract
    Experimental C/V curves are presented for gate-controlled diodes in silicon on sapphire and are analysed with a numerically implemented model, which shows the effects of a fixed layer of charge at the silicon-sapphire interface.
  • Keywords
    field effect devices; semiconductor diodes; C/V curves; SOS; field effect devices; gate controlled diodes; numerically implemented model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750039
  • Filename
    4236546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926527