DocumentCode
926584
Title
New Photoelectric Devices Utilizing Carrier Injection
Author
Lehovec, Kurt
Author_Institution
Formerly, Signal Corps Engineering Laboratory, Fort Monmouth, N.J. Now at Sprague Electric Co., North Adams, Mass.
Volume
40
Issue
11
fYear
1952
Firstpage
1407
Lastpage
1409
Abstract
The detection of injected carriers by their absorption and by emission due to their recombination with majority carriers is discussed. Two new components are proposed: (1) the "photo-modulator," which permits modulation of a light beam by the change in absorption due to injected carriers (the photomodulator in connection with a phototransistor, or some other type of photocell, may be useful as an amplifier); and (2) the "graded seal junction," which permits the light to be transmitted to and from a p-n-junction without substantial absorption in the bulk semiconductor.
Keywords
Crystals; Electromagnetic wave absorption; Electron optics; Intensity modulation; Optical modulation; Phototransistors; Radiative recombination; Semiconductor optical amplifiers; Silicon; Stimulated emission;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1952.273970
Filename
4050842
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