• DocumentCode
    926584
  • Title

    New Photoelectric Devices Utilizing Carrier Injection

  • Author

    Lehovec, Kurt

  • Author_Institution
    Formerly, Signal Corps Engineering Laboratory, Fort Monmouth, N.J. Now at Sprague Electric Co., North Adams, Mass.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1407
  • Lastpage
    1409
  • Abstract
    The detection of injected carriers by their absorption and by emission due to their recombination with majority carriers is discussed. Two new components are proposed: (1) the "photo-modulator," which permits modulation of a light beam by the change in absorption due to injected carriers (the photomodulator in connection with a phototransistor, or some other type of photocell, may be useful as an amplifier); and (2) the "graded seal junction," which permits the light to be transmitted to and from a p-n-junction without substantial absorption in the bulk semiconductor.
  • Keywords
    Crystals; Electromagnetic wave absorption; Electron optics; Intensity modulation; Optical modulation; Phototransistors; Radiative recombination; Semiconductor optical amplifiers; Silicon; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273970
  • Filename
    4050842