DocumentCode :
926584
Title :
New Photoelectric Devices Utilizing Carrier Injection
Author :
Lehovec, Kurt
Author_Institution :
Formerly, Signal Corps Engineering Laboratory, Fort Monmouth, N.J. Now at Sprague Electric Co., North Adams, Mass.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1407
Lastpage :
1409
Abstract :
The detection of injected carriers by their absorption and by emission due to their recombination with majority carriers is discussed. Two new components are proposed: (1) the "photo-modulator," which permits modulation of a light beam by the change in absorption due to injected carriers (the photomodulator in connection with a phototransistor, or some other type of photocell, may be useful as an amplifier); and (2) the "graded seal junction," which permits the light to be transmitted to and from a p-n-junction without substantial absorption in the bulk semiconductor.
Keywords :
Crystals; Electromagnetic wave absorption; Electron optics; Intensity modulation; Optical modulation; Phototransistors; Radiative recombination; Semiconductor optical amplifiers; Silicon; Stimulated emission;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273970
Filename :
4050842
Link To Document :
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