• DocumentCode
    926594
  • Title

    Properties of the M-1740 P-N Junction Photocell

  • Author

    Shive, John N.

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill, N.J.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1410
  • Lastpage
    1413
  • Abstract
    The p-n junction photocell has a sensitivity of 30 ma per lumen for light of 2,400 degrees K color temperature, corresponding to a quantum yield approximately unity in the spectral range from visible to the long wave cutoff at 1.8 microns. Dark currents of e few microamperes are observed at room temperature, with a temperature coefficient of about + 10 per cent per degree C. Both dark and light currents exhibit saturation in the range from 1 to 90 volts applied. The frequency response is flat into the 100-kc region. Short-circuit noise currents are observed around 20 ¿¿a a in a 1-cps band at 1,000 cps. The photocell element is encapsulated in a plastic housing ¿ × 3/16 × ¿ inch in dimensions.
  • Keywords
    Germanium; Optical noise; P-n junctions; Photovoltaic systems; Plastics; Semiconductor device noise; Solar power generation; Sparks; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273971
  • Filename
    4050843