DocumentCode
926597
Title
Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHz
Author
Vendelin, G.D. ; Omori, Mutsumi
Author_Institution
Varin Associates, Palo Alto, USA
Volume
11
Issue
3
fYear
1975
Firstpage
60
Lastpage
61
Abstract
A new equivalent circuit is given for the GaAs m.e.s.f.e.t., which includes resistive loss in the feed back elements. The circuit values are given for several 1 ¿m-gate GaAs m.e.s.f.e.t.s. A method for fitting s12 to the measured data is described. Finally, the gain and stability factor of several GaAs m.e.s.f.e.t.s. are extrapolated to 24 GHz from the present model.
Keywords
equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; GaAs MESFET; circuit model; equivalent circuit; feedback elements; gain; resistive loss; stability factor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750046
Filename
4236554
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