DocumentCode
926601
Title
Hall Effect
Author
Lindberg, Olof
Author_Institution
Westinghouse Research Laboratories, East Pittsburgh, Pa.
Volume
40
Issue
11
fYear
1952
Firstpage
1414
Lastpage
1419
Abstract
The Hall effect is one of the rich sources of information about the conduction properties of semiconductors. The mobility and carrier concentration can be obtained from the Hall constant in conjunction with the resistivity; this cannot be done with the resistivity alone. The mobility is pertinent to the understanding of transistors since such things as high-frequency cut-off and the intrinsic current gain of the transistor are related to this property of germanium. The Hall effect and associated thermomagnetic and galvanomagnetic (Ettingshausen, Nernst, Righi-Leduc, and Ohmic) effects are discussed. The elimination of the effect of associated phenomena from the Hall measurement can be achieved in several ways. Some of the methods which are used today in the study of germanium are discussed, and typical apparatus is described.
Keywords
Atomic measurements; Charge carrier processes; Conductivity; Density measurement; Electron mobility; Germanium; Hall effect; Magnetic field measurement; Magnetic fields; Semiconductor impurities;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1952.273972
Filename
4050844
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