• DocumentCode
    926601
  • Title

    Hall Effect

  • Author

    Lindberg, Olof

  • Author_Institution
    Westinghouse Research Laboratories, East Pittsburgh, Pa.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1414
  • Lastpage
    1419
  • Abstract
    The Hall effect is one of the rich sources of information about the conduction properties of semiconductors. The mobility and carrier concentration can be obtained from the Hall constant in conjunction with the resistivity; this cannot be done with the resistivity alone. The mobility is pertinent to the understanding of transistors since such things as high-frequency cut-off and the intrinsic current gain of the transistor are related to this property of germanium. The Hall effect and associated thermomagnetic and galvanomagnetic (Ettingshausen, Nernst, Righi-Leduc, and Ohmic) effects are discussed. The elimination of the effect of associated phenomena from the Hall measurement can be achieved in several ways. Some of the methods which are used today in the study of germanium are discussed, and typical apparatus is described.
  • Keywords
    Atomic measurements; Charge carrier processes; Conductivity; Density measurement; Electron mobility; Germanium; Hall effect; Magnetic field measurement; Magnetic fields; Semiconductor impurities;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273972
  • Filename
    4050844