DocumentCode :
926620
Title :
Measurement of Minority Carrier Lifetime in Germanium
Author :
Valdes, L.B.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N.J.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1420
Lastpage :
1423
Abstract :
A method for measuring the lifetime of minority carriers in germanium is described. Basically, it consists of liberating the carriers optically on a flat face of a crystal and measuring the concentration of minority carriers as a function of distance from the point of liberation. The mathematical model is analyzed and experimental results are presented here.
Keywords :
Charge carrier lifetime; Electrodes; Equations; Germanium; Laboratories; Length measurement; Mathematical model; Semiconductor materials; Surface treatment; Telephony;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273973
Filename :
4050845
Link To Document :
بازگشت