• DocumentCode
    926625
  • Title

    Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)

  • Author

    Oxley, C.H.

  • Author_Institution
    De Montfort Univ., Leicester, UK
  • Volume
    40
  • Issue
    5
  • fYear
    2004
  • fDate
    3/4/2004 12:00:00 AM
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    To accurately model distortion effects using a large signal model the variation of all the elements of the equivalent circuit model under bias conditions are required. A technique is presented to extract the source resistance Rs under bias conditions for the aluminium gallium nitride/gallium nitride (AlGaN/GaN) HEMT. The source resistance Rs is found to decrease as Vgs is increased, implying that the conduction channel becomes wider, which indicates a parallel conduction path to the 2D electron-gas.
  • Keywords
    III-V semiconductors; S-parameters; aluminium compounds; distortion; electric resistance measurement; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 2D electron-gas; AlGaN-GaN; GaN HEMT device; aluminium gallium nitride/gallium nitride; bias conditions; distortion effects; equivalent circuit model; large signal model; parallel conduction path; saturation region; source resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040236
  • Filename
    1273977
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926625