Title :
Theory of Alpha for P-N-P Diffused Junction Transistors
Author_Institution :
Electronics Laboratory, General Electric Co., Syracuse, N.Y.
Abstract :
Equations are developed for the emitter and collector currents for this type of transistor, and the resulting expressions are then used to obtain the current-gain factor. The low-frequency value of the current-gain factor and its high-frequency cutoff value are shown to depend strongly on the width of the base region, the behavior at high frequencies being better for small base width. The high-frequency behavior when used in grounded emitter applications depends more directly on the lifetime of holes in the germanium and shows only a second-order dependence on the base width; the lower the lifetime the higher the frequency cutoff value.
Keywords :
Boundary conditions; Charge carrier processes; Cutoff frequency; Equations; Geometry; Germanium; Helium; Impurities; P-n junctions; Voltage;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1952.273974