DocumentCode :
926630
Title :
Theory of Alpha for P-N-P Diffused Junction Transistors
Author :
Steele, Earl L.
Author_Institution :
Electronics Laboratory, General Electric Co., Syracuse, N.Y.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1424
Lastpage :
1428
Abstract :
Equations are developed for the emitter and collector currents for this type of transistor, and the resulting expressions are then used to obtain the current-gain factor. The low-frequency value of the current-gain factor and its high-frequency cutoff value are shown to depend strongly on the width of the base region, the behavior at high frequencies being better for small base width. The high-frequency behavior when used in grounded emitter applications depends more directly on the lifetime of holes in the germanium and shows only a second-order dependence on the base width; the lower the lifetime the higher the frequency cutoff value.
Keywords :
Boundary conditions; Charge carrier processes; Cutoff frequency; Equations; Geometry; Germanium; Helium; Impurities; P-n junctions; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273974
Filename :
4050846
Link To Document :
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