Author :
Thompson, M.G. ; Tan, K.T. ; Marinelli, C. ; Williams, K.A. ; Penty, R.V. ; White, I.H. ; Kuntz, M. ; Ouyang, D. ; Bimberg, D. ; Ustinov, V.M. ; Zhukov, A.E. ; Kovsh, A.R. ; Ledentsov, N.N. ; Kang, D.-J. ; Blamire, M.G.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; quantum dot lasers; semiconductor quantum dots; timing jitter; 1.3 micron; 18 GHz; 2.5 to 50 MHz; 600 fs; Fourier-transform-limited optical pulse; InGaAs-GaAs; InGaAs/GaAs quantum dot lasers; monolithic modelocked quantum dot lasers; passive modelocking; root-mean-square timing jitter; transform limited optical pulse;