• DocumentCode
    926679
  • Title

    An Experimental Investigation of Transistor Noise

  • Author

    Keonjian, E. ; Schaffner, J.S.

  • Author_Institution
    General Electric Co., Electronics Park, Syracuse, N.Y.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1456
  • Lastpage
    1460
  • Abstract
    Transistor noise is discussed in general and methods of measurement are presented. Experimental results show that noise figures for point-contact transistors are approximately 50 db; for junction transistors they may be as low as 10 db at 1,000 cycles. The effect of the variation of the dc operating point on noise figures and other parameters is discussed. It was found that the noise figure of point-contact transistors is relatively independent of the dc operating point, while for junction transistors it may vary considerably with the collector voltage and to some extent with the emitter current.
  • Keywords
    Bandwidth; Circuit noise; Equivalent circuits; Frequency response; Impedance; Noise figure; Noise generators; Noise level; Noise measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273979
  • Filename
    4050851