DocumentCode
926679
Title
An Experimental Investigation of Transistor Noise
Author
Keonjian, E. ; Schaffner, J.S.
Author_Institution
General Electric Co., Electronics Park, Syracuse, N.Y.
Volume
40
Issue
11
fYear
1952
Firstpage
1456
Lastpage
1460
Abstract
Transistor noise is discussed in general and methods of measurement are presented. Experimental results show that noise figures for point-contact transistors are approximately 50 db; for junction transistors they may be as low as 10 db at 1,000 cycles. The effect of the variation of the dc operating point on noise figures and other parameters is discussed. It was found that the noise figure of point-contact transistors is relatively independent of the dc operating point, while for junction transistors it may vary considerably with the collector voltage and to some extent with the emitter current.
Keywords
Bandwidth; Circuit noise; Equivalent circuits; Frequency response; Impedance; Noise figure; Noise generators; Noise level; Noise measurement; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1952.273979
Filename
4050851
Link To Document