DocumentCode
926700
Title
A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing System
Author
Honjo, Kazuhiko ; Takayama, Yoichiro
Volume
29
Issue
6
fYear
1981
fDate
6/1/1981 12:00:00 AM
Firstpage
579
Lastpage
582
Abstract
A 25-W 29-dB gain 5-GHz GaAs FET amplifier has been developed which can be used for a transmitter in the Microwave Landing System. By using 10-W class practical internally matched GaAs FET´s hermetically sealed in ceramic packages, the four-stage amplifier has been constructed simply. The amplifier provides 30-W power output with 18.5 percent power efficiency at 17-dBm power input level. It also exhibited an exceffent AM/PM conversion of approximately 1°/dB, compared to 6°/dB for TWT amplifiers.
Keywords
Ceramics; Gallium arsenide; Hermetic seals; High power amplifiers; Microwave FETs; Microwave amplifiers; Microwave devices; Packaging; Power amplifiers; Transmitters;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1981.1130396
Filename
1130396
Link To Document