DocumentCode :
926712
Title :
Frequency Variations of Current-Amplification Factor for Junction Transistors
Author :
Pritchard, R.L.
Author_Institution :
Research Laboratory, General Electric Co., Schenectady, N.Y.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1476
Lastpage :
1481
Abstract :
In a grounded-emitter or grounded-collector connection of a junction transistor, the effective current amplification is proportional to the factor (1-¿)-1, where ¿ is the current-amplification factor of the transistor. As a result of the phase shift associated with a, the magnitude of (1-¿)-1 decreases rapidly with increasing frequency. It is shown that the magnitude of (1-¿)-1 is 3 db below its low-frequency value at a frequency of the order of magnitude of (1-¿0) times the frequency at which the magnitude of ¿ alone has decreased 3 db below its low-frequency value of ¿0. In addition, experimental results of measurements of phase and amplitude characteristics of ¿ as a function of frequency for several fused-impurity p-n-p junction transistors are presented and are compared with the variation of ¿ with frequency calculated in accordance with the theory of Shockley, et al.
Keywords :
Coupling circuits; Cutoff frequency; Electric variables; Production; Switching circuits; Temperature control; Temperature dependence; Temperature distribution; Test equipment; Transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273982
Filename :
4050854
Link To Document :
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