• DocumentCode
    926758
  • Title

    Temperature dependence of the subthreshold velocity/field characteristic for epitaxial InP

  • Author

    Majerfeld, A. ; Potter, K.E. ; Robson, P.N.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    11
  • Issue
    4
  • fYear
    1975
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    The subthreshold electron-drift-velocity/field characteristic for epitaxial InP has been measured over the temperature range 118¿446 K. The threshold field of H-shaped devices is found to increase from 8 to 12.3 kV/cm and the peak velocity to decrease monotonically from 3.3×107 to 1.9×107 cm/s over this temperature interval.
  • Keywords
    III-V semiconductors; electrical conductivity of solid semiconductors and insulators; high field effects; indium compounds; electron drift; epitaxial InP; subthreshold velocity/field characteristic; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750061
  • Filename
    4236570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926758