Title :
Temperature dependence of the subthreshold velocity/field characteristic for epitaxial InP
Author :
Majerfeld, A. ; Potter, K.E. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
The subthreshold electron-drift-velocity/field characteristic for epitaxial InP has been measured over the temperature range 118¿446 K. The threshold field of H-shaped devices is found to increase from 8 to 12.3 kV/cm and the peak velocity to decrease monotonically from 3.3×107 to 1.9×107 cm/s over this temperature interval.
Keywords :
III-V semiconductors; electrical conductivity of solid semiconductors and insulators; high field effects; indium compounds; electron drift; epitaxial InP; subthreshold velocity/field characteristic; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750061
