DocumentCode :
926829
Title :
Low-frequency noise of ion-implanted double-drift IMPATT diodes
Author :
Lee, D.H.
Volume :
61
Issue :
5
fYear :
1973
fDate :
5/1/1973 12:00:00 AM
Firstpage :
666
Lastpage :
667
Abstract :
The low-frequency open circuit noise spectral density S(f) of an ion-implanted 60-GHz double-drift-region IMPATT diode was measured as a function of the dc avalanche current I0. Over an intermediate current range the noise follows an S(f)=a2VB02/I0relationship where VB0is the reverse breakdown voltage and a2≃4.5 × 10-20A/Hz.
Keywords :
Band pass filters; Charge carrier processes; Diodes; Electric breakdown; Fabrication; Frequency; Impedance; Low-frequency noise; Noise level; Silicon;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1973.9127
Filename :
1451057
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=926829
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