Title :
Velocity/field characteristic of n-type indium phosphide at 110 and 330 K
Author :
Tebbenham, R.L. ; Walsh, Declan
Author_Institution :
Oxford University, Department of Engineering Science, Oxford, UK
Abstract :
The technique of microwave conductivity measurement was employed to investigate the velocity/field characteristic of epitaxially grown indium phosphide. Cooling the material from 330 to 110 K produced a 10% decrease in threshold field and a 70% increase in peak velocity. Measurements of variation of power absorption with epitaxial layer thickness are also reported.
Keywords :
III-V semiconductors; electrical conductivity of solid semiconductors and insulators; high field effects; indium compounds; 110K; epitaxial layer thickness; microwave conductivity measurement; n-InP; power absorption; threshold field; velocity/field characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750073
