Title :
Effect of the Cavity Resonance-Gain Offset on the Output Power Characteristics of GaSb-Based VECSELs
Author :
Schulz, N. ; Rattunde, M. ; Ritzenthaler, C. ; Rösener, B. ; Manz, C. ; Köhler, K. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg
Abstract :
In spite of elaborate heat-sinking employing intracavity heat-spreaders, the maximum output power of current (AlGaIn)(AsSb)-based vertical-external-cavity surface-emitting lasers (VECSELs) is still limited by thermal rollover (e.g., 0.8 W at 20degC at a peak emission wavelength of 2.35 mum). To identify the mechanisms underlying this thermal limitation, VECSEL structures with different cavity resonance-gain offsets have been fabricated and characterized. The resulting data have been analyzed using a thermooptical model. The temperature-dependent spectral alignment of quantum-well gain and microcavity resonance (so-called ldquogain offsetrdquo) is found to be one of the key parameters in optimizing high-power performance. A 45% increase in maximum room-temperature output power is obtained if the gain offset is chosen such that the gain spectrum matches the cavity resonance at operating pump power, i.e., at elevated active region temperatures.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium compounds; laser beams; laser cavity resonators; microcavity lasers; surface emitting lasers; thermo-optical devices; AlGaIn; AsSb; GaSb; GaSb-based VECSEL; cavity resonance-gain offset; microcavity resonance; output power characteristics; power 0.8 W; quantum-well gain; temperature 20 C; temperature-dependent spectral alignment; thermooptical model; vertical-external-cavity surface-emitting lasers; wavelength 2.35 mum; Data analysis; Gas lasers; Laser modes; Power generation; Power lasers; Quantum wells; Resonance; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers; GaInAsSb; infrared; vertical-external-cavity surface-emitting laser (VECSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.906054