Title :
Low-frequency noise characteristics of commercial silicon and gallium arsenide IMPATT diodes
Author :
Gutmann, R.J. ; Kucharewski, N.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
5/1/1973 12:00:00 AM
Abstract :
Low-frequency noise characteristics of a variety of commercially available X-band 500-W CW IMPATT diodes are reported. All the silicon diodes exhibited characteristics in agreement with previously published avalanche noise theory, while the gallium arsenide diodes exhibited an excess amount of low-frequency noise, multiple noise peaks with bias current, and a dynamic resistance that decreases with bias current.
Keywords :
Gallium arsenide; Isolators; Low-frequency noise; Oscillators; Radio frequency; Schottky diodes; Silicon; Testing; Tuning; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9135
