• DocumentCode
    926909
  • Title

    Low-frequency noise characteristics of commercial silicon and gallium arsenide IMPATT diodes

  • Author

    Gutmann, R.J. ; Kucharewski, N.

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    61
  • Issue
    5
  • fYear
    1973
  • fDate
    5/1/1973 12:00:00 AM
  • Firstpage
    676
  • Lastpage
    678
  • Abstract
    Low-frequency noise characteristics of a variety of commercially available X-band 500-W CW IMPATT diodes are reported. All the silicon diodes exhibited characteristics in agreement with previously published avalanche noise theory, while the gallium arsenide diodes exhibited an excess amount of low-frequency noise, multiple noise peaks with bias current, and a dynamic resistance that decreases with bias current.
  • Keywords
    Gallium arsenide; Isolators; Low-frequency noise; Oscillators; Radio frequency; Schottky diodes; Silicon; Testing; Tuning; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9135
  • Filename
    1451065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926909