Blue and green electroluminescence from a porous silicon device

Author

Steiner, P. ; Kozlowski, F. ; Lang, W.

Author_Institution

Fraunhofer Inst. for Solid State Technol., Munich, Germany

Volume

14

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

317

Lastpage

319

Abstract

The fabrication and the characteristics of light-emitting porous silicon devices are presented. A nanoporous layer on n-substrate is formed under the influence of UV illumination during anodization. The wafer shows weak photoluminescence with a maximum at 640 nm. The porous layer is contacted by pads consisting of semitransparent gold. When voltage is applied, electroluminescence in the 560- to 480-nm range can be observed. The current-voltage characteristic is strongly rectifying. Light emission occurs under forward bias. A possible model for the shift of the electroluminescence toward higher energies is given.<>

Keywords

anodisation; electroluminescent displays; elemental semiconductors; porous materials; silicon; 480 to 560 nm; 640 nm; UV illumination; anodization; blue electroluminescence; current-voltage characteristic; electroluminescence shift model; green electroluminescence; light emitting device; porous Si device; semiconductor; semitransparent Au; weak photoluminescence; Current-voltage characteristics; Electroluminescence; Electroluminescent devices; Fabrication; Gold; Lighting; Nanoporous materials; Photoluminescence; Silicon devices; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225558

Filename

225558