Title :
Blue and green electroluminescence from a porous silicon device
Author :
Steiner, P. ; Kozlowski, F. ; Lang, W.
Author_Institution :
Fraunhofer Inst. for Solid State Technol., Munich, Germany
fDate :
7/1/1993 12:00:00 AM
Abstract :
The fabrication and the characteristics of light-emitting porous silicon devices are presented. A nanoporous layer on n-substrate is formed under the influence of UV illumination during anodization. The wafer shows weak photoluminescence with a maximum at 640 nm. The porous layer is contacted by pads consisting of semitransparent gold. When voltage is applied, electroluminescence in the 560- to 480-nm range can be observed. The current-voltage characteristic is strongly rectifying. Light emission occurs under forward bias. A possible model for the shift of the electroluminescence toward higher energies is given.<>
Keywords :
anodisation; electroluminescent displays; elemental semiconductors; porous materials; silicon; 480 to 560 nm; 640 nm; UV illumination; anodization; blue electroluminescence; current-voltage characteristic; electroluminescence shift model; green electroluminescence; light emitting device; porous Si device; semiconductor; semitransparent Au; weak photoluminescence; Current-voltage characteristics; Electroluminescence; Electroluminescent devices; Fabrication; Gold; Lighting; Nanoporous materials; Photoluminescence; Silicon devices; Voltage;
Journal_Title :
Electron Device Letters, IEEE
