DocumentCode
927035
Title
Semi-insulating properties of Fe-doped InP
Author
Mizuno, Osamu ; Watanabe, Hisao
Author_Institution
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Volume
11
Issue
5
fYear
1975
Firstpage
118
Lastpage
119
Abstract
Semi-insulating InP having a room-temperature resistivity of greater than 107 ¿cm was prepared by Fe doping. The current/voltage characteristic of the material changed from ohmic to V2 dependent at about 104 V/cm. Temperature dependence of the resistivity gave an activation energy of 0.66 eV. The Hall effect was negative, and the observed electron concentration was about 109 cm¿3.
Keywords
Hall effect; III-V semiconductors; carrier density; electrical conductivity of solid semiconductors and insulators; indium compounds; iron; activation energy; electron concentration; negative Hall effect; resistivity; semiinsulating InP:Fe;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750089
Filename
4236599
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