• DocumentCode
    927055
  • Title

    Double snapback in SOI nMOSFETs and its application for SOI ESD protection

  • Author

    Verhaege, Koen ; Groeseneken, Guido ; Colinge, Jean-Pierre ; Maes, Herman E.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    14
  • Issue
    7
  • fYear
    1993
  • fDate
    7/1/1993 12:00:00 AM
  • Firstpage
    326
  • Lastpage
    328
  • Abstract
    Double snapback in silicon-on-insulator (SOI) nMOSFETs is reported. An extensive experimental analysis of this phenomenon and a tentative model are presented. It is shown that this double-snapback phenomenon offers a basis for an electrostatic discharge (ESD) protection concept for SOI technologies.<>
  • Keywords
    electrostatic discharge; insulated gate field effect transistors; protection; semiconductor-insulator boundaries; 3D DAVINCI simulation; SOI ESD protection; SOI nMOSFET; SOI technologies; Si on insulator; double-snapback phenomenon; electrostatic discharge; modelling; optical light emission microscopy; semiconductor; Electrostatic discharge; MOSFETs; Protection; Silicon on insulator technology;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.225561
  • Filename
    225561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927055