Title :
Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application
Author :
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Lothian, J.R. ; Wisk, P.W. ; Fullowan, T.R. ; Chen, Young-Kai ; Yang, L.W. ; Fu, S.T. ; Brozovich, Roy S. ; Lin, H.H.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for microwave applications, InGaP/GaAs HBTs with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) with excellent DC, RF, and microwave performance are demonstrated. As previously reported, with a 700-AA-thick base layer (135- Omega /sq sheet resistance), a DC current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2- mu m*5- mu m emitter area device. A device with 12 cells, each consisting of a 2- mu m*15- mu m emitter area device for a total emitter area of 360 mu m/sup 2/, was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; power transistors; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 0.6 W; 13 dB; 4 GHz; 50 percent; 70 GHz; DC current gain; HBT; InGaP-GaAs heterojunction bipolar transistor; MOMBE; RF performance; continuous wave bias condition; cutoff frequency; maximum oscillation frequency; metal organic molecular beam epitaxy; microwave power application; power-added efficiency; self-aligned transistor; semiconductor; sheet resistance; Area measurement; Current measurement; Cutoff frequency; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Molecular beam epitaxial growth; Radio frequency;
Journal_Title :
Electron Device Letters, IEEE
