High-performance Si/SiGe n-type modulation-doped transistors

Author

Ismail, Khaled ; Rishton, S. ; Chu, J.O. ; Chan, K. ; Meyerson, B.S.

Author_Institution

IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA

Volume

14

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

348

Lastpage

350

Abstract

Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.<>

Keywords

Ge-Si alloys; carrier density; carrier mobility; chemical vapour deposition; elemental semiconductors; high electron mobility transistors; silicon; 0.5 micron; 390 mS/mm; 550 C; 77 K; CVD; MODFET; Si-SiGe modulation doped transistors; electron sheet concentration; enhanced mode n-type transistors; optimized layer design; parasitic series resistance; peak transconductance; room temperature mobility; semiconductor; Design optimization; Electron mobility; Epitaxial layers; Germanium silicon alloys; Sheet materials; Silicon germanium; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225569

Filename

225569