Determination of Si/SiO/sub 2/ interface roughness using weak localization

Author

Anderson, Warren R. ; Lombardi, D.R. ; Wheeler, R.G. ; Ma, Tso-Ping

Author_Institution

Yale Univ., New Haven, CT, USA

Volume

14

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

351

Lastpage

353

Abstract

The interface roughness of intentionally textured Si/SiO/sub 2/ interfaces was measured using the quantum weak localization (WL) correction to the electrical conductivity at low temperatures. The deduced roughness was confirmed by observation of the Si surface replicas by atomic force microscopy (AFM). Quantitative agreement between the two methods was found ( Delta =1.2 to 1.4 AA from WL and 1.35 AA from AFM). For a surface with artificially induced texture, it is found that WL can easily distinguish a significant increase in roughness relative to the smooth surfaces. AFM confirms this qualitative conclusion.<>

Keywords

atomic force microscopy; elemental semiconductors; insulated gate field effect transistors; interface structure; quantum interference phenomena; semiconductor-insulator boundaries; silicon compounds; surface texture; AFM; Si surface replicas; Si-SiO/sub 2/ interface texture; artificially induced texture; atomic force microscopy; electrical conductivity; interface roughness; n-channel Hall-bar MOSFET; quantum weak localisation correction; semiconductor; Atomic force microscopy; Atomic measurements; Conductivity measurement; Electric variables measurement; Rough surfaces; Surface roughness; Surface texture; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225570

Filename

225570