• DocumentCode
    927162
  • Title

    Carrier lifetime in semiconductors for steady-state recombination conditions

  • Author

    van de Wiele, F.

  • Author_Institution
    Université Catholique de Louvain, Louvain-la-Neuve, Belgium
  • Volume
    61
  • Issue
    6
  • fYear
    1973
  • fDate
    6/1/1973 12:00:00 AM
  • Firstpage
    793
  • Lastpage
    794
  • Abstract
    An extension of the Shockley-Read expression for steady-state lifetime is proposed for inhomogeneous nondegenerate semiconductors under a nonuniform external generation Gn(Gp) of electrons (holes) and in the presence of current flow. The special case of small disturbances in carrier density for a semiconductor with local electrical neutrality is also considered.
  • Keywords
    Bridge circuits; Charge carrier lifetime; Delay effects; Gallium arsenide; Logic devices; Network address translation; Poisson equations; Radiative recombination; Signal generators; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9160
  • Filename
    1451090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927162