Title :
Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet
Author :
Castellazzi, Alberto ; Gerstenmaier, York C. ; Kraus, Rainer ; Wachutka, Gerhard K M
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich
fDate :
5/1/2006 12:00:00 AM
Abstract :
This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe reliability problems. To enable thorough investigations by circuit simulations an accurate physics-based compact model of the devices is proposed: it includes all important electrothermal effects relevant to the description of the observed failure mechanisms. By means of an advanced thermal-modeling approach, multichip assemblies can be accurately described, including mutual heating effects between neighboring devices. Some properly chosen examples demonstrate the validity of the model and its usefulness for reliability investigations
Keywords :
power MOSFET; semiconductor device reliability; 42 V; PowerNet; circuit simulation; electrothermal effects; failure mechanisms; power MOSFET; reliability analysis; thermal-modeling approach; Batteries; Electric breakdown; Engines; FETs; Hybrid power systems; MOS devices; MOSFETs; Power generation; Temperature; Threshold voltage; Electrothermal effects; modeling; power metal-oxide semiconductor field-effect transistors (MOSFETs); reliability;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2006.872382
