Tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon (TOPS)

Author

Wu, Shye Lin ; Lee, Chung Len ; Lei, Tan Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

14

Issue

8

fYear

1993

Firstpage

379

Lastpage

381

Abstract

A textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate is reported. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si-SiO/sub 2/ interface is obtained. The textured interface results in localized high fields and enhances electron injection into TOPS. TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and interface state generation under high-field operation, and a higher asymmetric injection polarity than the normal oxide.<>

Keywords

electron traps; elemental semiconductors; grain boundaries; high field effects; interface electron states; oxidation; semiconductor-insulator boundaries; silicon; surface texture; tunnelling; Si substrate; asymmetric injection polarity; electron injection; electron trapping; enhanced oxidation rate; grain boundaries; high-field operation; interface state generation; localized high fields; textured Si-SiO/sub 2/ interface; thermal oxidation; thin polysilicon film; Dielectric substrates; Electron traps; Grain boundaries; Interface states; MOS capacitors; Oxidation; Semiconductor films; Silicon; Temperature; Thermal stresses;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225585

Filename

225585