High-performance submicrometer undergated thin-film transistors without high-temperature rapid thermal annealing or plasma hydrogenation

Author

Liu, Chun Ting ; Lee, K.H.

Author_Institution

AT&T Bell Labs., Allentown, PA, USA

Volume

14

Issue

8

fYear

1993

Firstpage

382

Lastpage

384

Abstract

High-performance submicrometer undergated thin-film transistors (TFTs) are fabricated without using high-temperature rapid thermal annealing or plasma hydrogenation. These processes are used in the state-of-the-art devices, but avoided in current manufacturing. For a 0.35- mu m*0.35- mu m device and a 0.7- mu m*0.5- mu m device, I/sub ON/ of 3 and 1.2 mu A are obtained with ON/OFF current ratios of 4*10/sup 5/ and 1.2*10/sup 8/, respectively, very close to that of state-of-the-art devices. A new lightly-doped-drain (LDD) structure is employed to improve I/sub ON/ reproducibility, which is difficult to achieve for deep-submicrometer devices with the conventional lightly-doped-offset (LDO) structure.<>

Keywords

insulated gate field effect transistors; thin film transistors; 1.2 muA; LDD structure; high density SRAM; lightly-doped-drain; static RAM; submicron TFT; undergated thin-film transistors; Etching; Lithography; Manufacturing processes; Plasma applications; Plasma devices; Plasma materials processing; Plasma temperature; Rapid thermal annealing; Rapid thermal processing; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225586

Filename

225586