High-speed InP/InGaAs heterojunction bipolar transistors

Author

Chau, Hin-Fai ; Beam, Edward A., III

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

14

Issue

8

fYear

1993

Firstpage

388

Lastpage

390

Abstract

Very-high-performance common-emitter InP/InGaAs single heterojunction bipolar transistors (HBTs) grown by metalorganic molecular beam epitaxy (MOMBE) are reported. They exhibit a maximum oscillation frequency (f/sub T/) of 180 GHz at a current density of 1*10/sup 5/ A/cm/sup 2/. this corresponds to an (R/sub B/C/sub BC/)/sub eff/=f/sub T//(8 pi f/sup 2//sub max/) delay time of 0.12 ps, which is the smallest value every reported for common-emitter InP/InGaAs HBTs. The devices have 11 mu m/sup 2/ total emitter area and exhibit current gain values up to 100 at zero base-collector bias voltage. The breakdown voltage of these devices is high with measured BV/sub CEO/ and BV/sub CEO/ of 8 and 17 V, respectively.<>

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device models; solid-state microwave devices; 0.12 ps; 180 GHz; HBT; InP-InGaAs; MOMBE; common-emitter; delay time; heterojunction bipolar transistors; metalorganic molecular beam epitaxy; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Phase noise; Substrates; Voltage; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225588

Filename

225588