Title :
Active-gate thin-film transistor
Author :
Lifshitz, Nadia ; Luryi, Serge ; Pinto, Mark R. ; Rafferty, Conor S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A thin-film transistor (TFT) with a lightly-doped offset built in the polysilicon gate is proposed. The offset region of the gate acts as a dielectric in the OFF state and as a conductor in the ON state. The unwelcome peak of the electric field near the drain in the OFF state is significantly reduced, as has been confirmed by two-dimensional device simulation. The key advantage of this device over conventional passive offset structures is that the ON current is not reduced, while the OFF current is suppressed by several orders of magnitude.<>
Keywords :
digital simulation; elemental semiconductors; semiconductor doping; silicon; thin film transistors; PADRE; active gate TFT; lightly-doped offset; polycrystalline Si; polysilicon gate; thin-film transistor; two-dimensional device simulation; Circuits; Conductors; Degradation; Dielectrics; Grain boundaries; MOSFETs; Random access memory; Silicon; Thin film devices; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
