Title :
1.7-ps, microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodes
Author :
Özbay, E. ; Bloom, David M. ; Chow, D.H. ; Schulman, J.N.
Author_Institution :
E.L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
Microwave integrated-circuit-compatible InAs/AlSb resonant tunneling diodes (RTDs) have been fabricated. The resulting devices have peak current densities of 3.3*10/sup 5/ A/cm/sup 2/ with peak-to-valley ratios of 3.3. Switching transition times of 1.7 ps are measured using electrooptic sampling techniques.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; indium compounds; resonant tunnelling devices; semiconductor switches; solid-state microwave devices; tunnel diodes; 1.7 ps; InAs-AlSb; MMIC compatible device; RTDs; integrated-circuit-compatible; resonant tunneling diodes; Current density; Current measurement; Density measurement; Diodes; Fabrication; Gallium arsenide; Gold; Indium gallium arsenide; Resonant tunneling devices; Sampling methods;
Journal_Title :
Electron Device Letters, IEEE
