Title :
Novel technique for SiO/sub 2/ formed by liquid-phase deposition for low-temperature processed polysilicon TFT
Author :
Yeh, Ching-Fa ; Lin, Shyue-Shyh ; Chen, Chun-Lin ; Yang, Yu-Chi
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A technique for SiO/sub 2/ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO/sub 2/ film with a lower P-etch rate shows a dense structure. LPD SiO/sub 2/ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO/sub 2/ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs).<>
Keywords :
coating techniques; elemental semiconductors; insulated gate field effect transistors; insulating thin films; liquid crystal displays; semiconductor technology; silicon; silicon compounds; thin film transistors; LCDs; P-etch rate; SiO/sub 2/ film; SiO/sub 2/ formation; SiO/sub 2/-Si; electrical characteristics; gate insulator; liquid crystal displays; liquid-phase deposition; low-temperature processed polysilicon TFT; pixel transistors; poly-Si; thin-film transistor; Bonding; Chemicals; Electromagnetic wave absorption; Insulation; Liquid crystal displays; Optical films; Silicon compounds; Substrates; Temperature; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
