DocumentCode
927352
Title
Monolithic LED arrays by selective liquid-phase epitaxy in GaP
Author
Kravitz, Lawrence C. ; Womac, James F. ; Heumann, Frederick K. ; Woodbury, H. Hugh
Author_Institution
General Electric Corporate Research and Development, Schenectady, NY
Volume
61
Issue
7
fYear
1973
fDate
7/1/1973 12:00:00 AM
Firstpage
891
Lastpage
894
Abstract
Progress in the fabrication of monolithic matrix-addressed arrays of light-emitting diodes (LED´s) in GaP using selective liquid-phase epitaxy is reviewed. The structures of two red arrays and one green array are discussed in detail. Photographs of the arrays are shown to demonstrate their capability as alphanumeric displays which may be easily interfaced with silicon integrated circuits. The use of selective liquid-phase epitaxy (LPE) to make flip-chip bonded displays is also discussed.
Keywords
Bonding; Displays; Epitaxial growth; Fabrication; Flip chip; Insulation; Light emitting diodes; Optical arrays; Silicon; Substrates;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.9178
Filename
1451108
Link To Document