Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers

Author

Takikawa, Masahiko ; Joshin, Kazukiyo

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

14

Issue

8

fYear

1993

Firstpage

406

Lastpage

408

Abstract

The authors developed 0.15- mu m-gate pseudomorphic n-InGaP/InGaAs/GaAs HEMTs for low-noise amplifiers. Passivated devices exhibited a noise figure of 0.41 dB with an associated gain of 13.0 dB at 12 GHz including package loss, and of 1.2 dB with an associated gain of 5.8 dB at 50 GHz. Reducing the short-channel effects was the key to achieving the best performance ever reported for passivated and packaged low-noise HEMTs on GaAs substrates. A high aspect ratio under the thin n-InGaP layer and good carrier confinement in the pseudomorphic InGaAs channel reduce the undesirable short-channel effects in these devices.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave amplifiers; solid-state microwave devices; 0.15 micron; 0.41 dB; 1.2 dB; 12 GHz; 13 dB; 5.8 dB; 50 GHz; GaAs substrates; HEMTs; InGaP-InGaAs-GaAs; carrier confinement; high aspect ratio; high electron mobility transistors; low-noise amplifiers; pseudomorphic InGaAs channel; short-channel effects; thin n-InGaP layer; Carrier confinement; Electron mobility; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MODFETs; Noise figure; Packaging;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225594

Filename

225594