Title :
Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers
Author :
Takikawa, Masahiko ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
The authors developed 0.15- mu m-gate pseudomorphic n-InGaP/InGaAs/GaAs HEMTs for low-noise amplifiers. Passivated devices exhibited a noise figure of 0.41 dB with an associated gain of 13.0 dB at 12 GHz including package loss, and of 1.2 dB with an associated gain of 5.8 dB at 50 GHz. Reducing the short-channel effects was the key to achieving the best performance ever reported for passivated and packaged low-noise HEMTs on GaAs substrates. A high aspect ratio under the thin n-InGaP layer and good carrier confinement in the pseudomorphic InGaAs channel reduce the undesirable short-channel effects in these devices.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave amplifiers; solid-state microwave devices; 0.15 micron; 0.41 dB; 1.2 dB; 12 GHz; 13 dB; 5.8 dB; 50 GHz; GaAs substrates; HEMTs; InGaP-InGaAs-GaAs; carrier confinement; high aspect ratio; high electron mobility transistors; low-noise amplifiers; pseudomorphic InGaAs channel; short-channel effects; thin n-InGaP layer; Carrier confinement; Electron mobility; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MODFETs; Noise figure; Packaging;
Journal_Title :
Electron Device Letters, IEEE
