DocumentCode
927354
Title
High-speed high-power 1.06 μm gallium--indium-arsenide light-emitting diodes
Author
Mabbitt, A.W. ; Mobsby, C.D.
Author_Institution
Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
Volume
11
Issue
8
fYear
1975
Firstpage
157
Lastpage
158
Abstract
The preparation of l.06μm gallium--indium-arsenide light-emitting diodes is described. Power outputs of 1 mW at 55 mA d.c. and pulsed power outputs of up to 0.5 W have been obtained. Attenuation/modulation experiments have shown 3 dB attenuation at 110 MHz. The use of such diodes in fibre-optic communication systems is suggested.
Keywords
light emitting diodes; optical communication equipment; optical modulation; 1.06 microns; attenuation/modulation experiments; fibre optic communication system; high speed high power GaInAs LED;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750120
Filename
4236633
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