Title :
Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs
Author :
Shahidi, G.G. ; Davari, Bijan ; Bucelot, Thomas J. ; Ronsheim, P.A. ; Coane, P.J. ; Pollack, S. ; Blair, C.R. ; Clark, B. ; Hansen, Howard H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Indium has been used as an alternative channel implant in submicrometer-channel Si MOSFETs in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to 0.17- mu m channel length. The device characteristics have been compared to those of uniform boron-implanted short-channel MOSFETs used in a 0.25- mu m CMOS technology. Results indicate that NMOSFETs with nonuniform channel doping obtained with indium have superior short-channel effect (SCE) when compared to NMOSFETs with uniformly (boron) doped channel.<>
Keywords :
elemental semiconductors; indium; insulated gate field effect transistors; ion implantation; semiconductor doping; silicon; 0.17 micron; Si:In; highly nonuniform channel doping; n-channel devices; short-channel behavior; submicrometer NMOSFETs; submicron MOSFET; Boron; CMOS technology; Capacitance; Design methodology; Doping profiles; Implants; Indium; MOSFET circuits; Transconductance; Vents;
Journal_Title :
Electron Device Letters, IEEE
