Title :
Ripple-Free High-Power Super-Luminescent Diode Arrays
Author :
Causa, F. ; Burrow, L.
Author_Institution :
Univ. of Bath, Bath
Abstract :
This paper presents the experimental and theoretical characterisation of arrays of tapered super-luminescent diodes to achieve very high, broad-band, ripple-free optical output. These arrays were fabricated from 980-nm high-power triple-quantum-well InGaAs-AlGaAs double heterostructures. Output powers of 2.7 W pulsed and of 280-mW quasi-CW were obtained from antireflection-coated arrays, with 10% maximum wall-plug efficiency per pulse at 0.75-W pulsed output power. Experimental and theoretical results for the optical-electrical characteristics and the near-and far-field radiation characteristics of the arrays are discussed and compared with those of corresponding individual super-luminescent diodes.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; indium compounds; optical arrays; optical fabrication; optical materials; semiconductor diodes; semiconductor quantum wells; superluminescent diodes; InGaAs-AlGaAs; antireflection-coated array; optical fabrication; optical-electrical characteristics; power 2.7 W; power 280 mW; radiation characteristics; ripple-free optical output; super-luminescent diode array; triple-quantum-well InGaAs-AlGaAs double heterostructure; wall-plug efficiency; wavelength 980 nm; Etching; Optical arrays; Optical devices; Optical feedback; Optical modulation; Optical pulses; Optical saturation; Power generation; Semiconductor diodes; Superluminescent diodes; Arrays; high-power; near and far fields; ripple-free spectrum; super-luminescent diodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.905291
