DocumentCode :
927413
Title :
Pulsed measurement of BARITT-diode impedance against current and temperature
Author :
Roer, Th G Van De ; Kwaspen, J.J.M.
Author_Institution :
Eindhoven University of Technology, Department of Electrical Engineering, Eindhoven, Netherlands
Volume :
11
Issue :
8
fYear :
1975
Firstpage :
165
Lastpage :
166
Abstract :
The small-signal impedances of M¿n¿p and p¿n¿p BARITT diodes have been measured as a function of bias current and diode temperature. A bridge method, developed by Van Iperen and Tjassens, has been adapted so that measurements can be made during short current pulses. In this way, the diode temperature can be kept close to the heatsink temperature. The method is equally suited for other microwave diodes, e.g. IMPATT and Gunn diodes.
Keywords :
avalanche diodes; electrical impedance measurement; solid-state microwave devices; transit time devices; Gunn diodes; IMPATT; M-n-p; bias current; bridge method; heatsink temperature; impedance; microwave diodes; p-n-p BARITT diode; pulsed measurement; temperature;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19750126
Filename :
4236639
Link To Document :
بازگشت