• DocumentCode
    927555
  • Title

    Ion implanted X-band IMPATT/TRAPATT back-to-back diodes

  • Author

    Fong, T.T. ; Ying, R.S. ; Lee, D.H.

  • Author_Institution
    Hughes Research Laboratories, Torrance, Calif.
  • Volume
    61
  • Issue
    7
  • fYear
    1973
  • fDate
    7/1/1973 12:00:00 AM
  • Firstpage
    1044
  • Lastpage
    1045
  • Abstract
    High-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation. Typical peak power of 8-12 W at 20-29-percent efficiency has been consistently achieved in a coaxial cavity. The highest power level obtained to date was 15-W peak, 21.5-percent efficiency at 8.1 GHz.
  • Keywords
    Avalanche breakdown; Boron; Circuits; Coaxial components; Diodes; Doping profiles; Epitaxial layers; Frequency; Pulse measurements; Silicon devices;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9198
  • Filename
    1451128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927555