Title :
Ion implanted X-band IMPATT/TRAPATT back-to-back diodes
Author :
Fong, T.T. ; Ying, R.S. ; Lee, D.H.
Author_Institution :
Hughes Research Laboratories, Torrance, Calif.
fDate :
7/1/1973 12:00:00 AM
Abstract :
High-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation. Typical peak power of 8-12 W at 20-29-percent efficiency has been consistently achieved in a coaxial cavity. The highest power level obtained to date was 15-W peak, 21.5-percent efficiency at 8.1 GHz.
Keywords :
Avalanche breakdown; Boron; Circuits; Coaxial components; Diodes; Doping profiles; Epitaxial layers; Frequency; Pulse measurements; Silicon devices;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9198
