Title :
DC electric-field profile control in long epitaxial layers of GaAs
Author :
Metz, L.S. ; Gandhi, O.P.
Author_Institution :
University of Utah, Salt Lake City, Utah
fDate :
7/1/1973 12:00:00 AM
Abstract :
Thin sheets of resistive material are predicted to smooth out the dc electric-field profile in arbitrarily long epitaxial layers of n-type GaAs. It is argued that the effect on RF gain is to require a minimum device thickness to overcome the resistive layer losses.
Keywords :
Electrons; Epitaxial layers; Gallium arsenide; Geometry; Poisson equations; Radio frequency; Radiofrequency amplifiers; Sheet materials; Space charge; Surface resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9202
