• DocumentCode
    927611
  • Title

    DC electric-field profile control in long epitaxial layers of GaAs

  • Author

    Metz, L.S. ; Gandhi, O.P.

  • Author_Institution
    University of Utah, Salt Lake City, Utah
  • Volume
    61
  • Issue
    7
  • fYear
    1973
  • fDate
    7/1/1973 12:00:00 AM
  • Firstpage
    1048
  • Lastpage
    1050
  • Abstract
    Thin sheets of resistive material are predicted to smooth out the dc electric-field profile in arbitrarily long epitaxial layers of n-type GaAs. It is argued that the effect on RF gain is to require a minimum device thickness to overcome the resistive layer losses.
  • Keywords
    Electrons; Epitaxial layers; Gallium arsenide; Geometry; Poisson equations; Radio frequency; Radiofrequency amplifiers; Sheet materials; Space charge; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9202
  • Filename
    1451132