Title :
Integrated GaAs f.e.t. mixer performance at X band
Author :
Pucel, R.A. ; Masse, D. ; Bera, Rajesh
Author_Institution :
Raytheon Company, Research Division, Waltham, USA
Abstract :
Experiments were performed at X band with GaAs f.e.t.s used as mixer elements. These studies show that an f.e.t. mixer may exhibit a conversion gain approaching that of the corresponding amplifier. Conversion gains as high as 6 dB were measured. Low noise and high signal-handling capabilities were also demonstrated.
Keywords :
field effect transistors; hybrid integrated circuits; mixers (circuits); solid-state microwave circuits; MIC; X-band; amplifier; conversion gain; integrated FET´s; mixer elements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750152
