Fabrication of 3-terminal transferred-electron logic devices by proton bombardment for device isolation

Proton bombardment has been used to convert n GaAs into high-resistivity material. This technique is used for isolating coplanar transferred-electron logic (t.e.l.) devices. The d.c. transfer characteristics of these devices show about 20% current drop. Preliminary experiments indicate that the device propagation delay is of the order of 50 ps.